DMBT3906 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for general purpose switching and amplifier applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -40 v emitter-base voltage vebo -5 v collector current ic -200 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -40 - - v ic=-10ma collector-emitter breakdown voltage bvceo -40 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icex - - -50 na vce =-30v, vbe=-3v collector-emitter saturation voltage (1) vce(sat)1 - - -250 mv ic=-10ma, ib=-1ma vce(sat)2 - -200 -400 mv ic=-50ma, ib=-5ma base-emitter saturation voltage (1) vbe(sat)1 -650 - -850 mv ic=-10ma, ib=-1ma vbe(sat)2 - -840 -950 mv ic=-50ma, ib=-5ma hfe1 60 - - - ic=-0.1ma, vce=-1v hfe2 80 - - - ic=-1ma, vce=-1v dc current gain(1) hfe3 100 - 300 - ic=-10ma, vce=-1v hfe4 60 - - - ic=-50ma, vce=-1v hfe5 30 - - - ic=-100ma, vce=-1v transition frequency ft 250 - - mhz ic=-10ma, vce =20v, f=100mhz output capacitance cob - - 4.5 pf vcb =-5v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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